ALD (Atomic layer deposition) and CVD (Chemical Vapor Deposition)

Semiconductor ALD/CVD precursors are the core and key raw materials for semiconductor thin film deposition processes. They can be used to prepare metal/oxide/nitride films through chemical vapor deposition (CVD) and atomic layer deposition (ALD). They are used in integrated circuit manufacturing processes at 90nm-14nm or even 7nm advanced technology nodes and are widely used in high-end chip manufacturing, including logic chips, AI chips, 5G chips Large capacity storage and cloud computing chips.

Atomic layer deposition (ALD)

Atomic layer deposition (ALD) is a thin film deposition technique. In fact, it is a chemical vapor deposition technology based on self limiting surface reactions. It involves depositing a thin film of material onto the substrate by altering the cycle of gas-phase chemical reactions. During each cycle, the precursor gas is introduced into the reaction chamber, where it reacts with the substrate surface to form a monolayer material. Then remove the unreacted precursor gas and introduce a second precursor gas to react with the monolayer. Repeat the cycle until the required film thickness is reached.

ALD has many applications. This technology can be used in various fields such as electronics, optics, energy, and catalysis. It is mainly used for the production of semiconductors and integrated circuits. ALD helps to deposit high k dielectric materials, such as hafnium oxide and alumina, which are important components of storage chips and microprocessors.

ALD can also be used for the production of thin film solar cells. It helps to deposit thin layers of materials such as zinc oxide and cadmium sulfide. These are crucial for the performance of solar cells. Depositing these layers using ALD can produce high-quality thin films with excellent optical and electrical properties.

ALD also helps to produce high-performance coatings for optical components. For example, in lenses and mirrors, ALD deposits anti reflective coatings. ALD also helps to deposit barrier coatings on flexible displays and organic electronic products.

CVD (Chemical Vapor Deposition)

CVD (chemical vapor deposition) is a commonly used technique for depositing thin films onto substrates in various applications. CVD involves the reaction of gaseous reactants on or near the substrate surface, forming a solid film. It also involves precursor gases. It decomposes or reacts with another gas to form a solid film on the substrate. The precursor gas is usually introduced into a reaction chamber containing the substrate, where it is heated to a temperature sufficient to cause the precursor to decompose or react with another gas to form a solid film on the substrate.

CVD has many different applications in fields such as optics, microelectronics, and materials science. It can also be used in the semiconductor industry to manufacture thin films and coatings for electronic equipment. In the field of optics, CVD can be used to deposit coatings on lenses, mirrors, and other optical components. In the field of materials science, CVD helps to synthesize various materials, such as ceramics, polymers, and metals.

The difference between ALD and CVD

definition

ALD is a chemical vapor deposition technique based on self limiting surface reactions, while CVD is a widely used material processing technique in which thin films are formed on heated substrates through chemical reactions of gas-phase precursors.

mode

ALD can deposit one layer of atomic thin film at a time, while CVD can deposit thin films with a wider range of thickness.

temperature

ALD requires lower temperatures, while CVD requires higher temperatures.

application area

ALD can be used for the production of semiconductors and integrated circuits, thin film solar cells, and high-performance coatings for optical components. On the other hand, CVD has extensive applications in fields such as optics, microelectronics, and materials science, which contribute to the manufacturing of electronic equipment films and coatings, deposition of coatings on lenses and mirrors, and synthesis of various materials.

conclusion

ALD and CVD are thin film deposition techniques that help to deposit thin films on substrates.

The main difference between ALD and CVD is that ALD deposits one atomic layer of thin film at a time, while CVD can deposit thin films with a wider range of thickness.